Danish third generation semiconductor team seeks cooperation

2021-07-26
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Industry: Telecom IT Region: Denmark Transaction price: $1 million Transaction method: equity financing

Brief introduction:

Third generation semiconductor Chinese research and development team, specializing in nanoscale surface treatment.

The core technology is to prepare micro-nano structures on the surface of GaN and SiC. The main characteristics are as follows: After the surface structure treatment of N-gan, the output power of vertical blue LED is greater than 400mW@350mA, and at least one times more than that of the device without surface structure. >17% EL enhancement for packaged LED devices; Suitable for side-flow, vertical, or thin-film flip chip design; The method is fast (<1 hour), low cost and large area; Can use existing production line; Wide band effective.

Now the founder seeks domestic partners and hopes to bring the whole team back to China for development.